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Quantum well structure of the bound-to-continuum design under an applied electric field of . The moduli squared of the relevant wave functions (in bold the upper state of lasing transition) are plotted and the arrow indicates the radiative transition. The layer sequence of one active cell, given in nanometers and starting from the injector barrier, is , where InAlAs barriers are in bold, InGaAs are in roman, and underlined numbers correspond to the -doped layers (Si, ).
Optical power and voltage vs dc current of samples A, B, and C at different heatsink temperatures. Sample B is close to the center of the gain curve, and samples A and C are located towards the lower/upper limits of available frequency range (corresponding spectra in Fig. 3).
High resolution single mode cw spectra of samples A, B, and C showing operation with a side-mode suppression ratio . Depicted are the spectra at threshold and and at the extremes of single laser tuning range achieved by the variation of temperature tuning. The corresponding single tuning ranges for samples A, B, and C are 10, 15, and , respectively.
Threshold current density in cw operation at vs wave numbers. The threshold current densities increase from (sample B) to (sample A) and (sample C).
Solid line: Normalized electroluminescence spectrum at measured under an applied bias voltage of . Dashed line: Sum of computed oscillator strengths of the transitions from level 12, assuming a Lorentzian broadening of FWHM for each transition. Open circles: Normalized inverse threshold current density of the three samples A, B, and C measured in pulsed mode.
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