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characteristics of devices based on 10 and 15 bilayers of erythrosin B at room temperature in two voltage-sweep directions (as shown by arrows). Inset shows the molecular structure of erythrosin B.
(Color online) characteristics of a device based on ten bilayers of erythrosin B at room temperature in three voltage loops. Arrows show the direction of voltage sweep.
(a) ROM and (b) RAM applications of a device based on ten bilayers of erythrosin B. In (a), the high- and low-conducting states were induced by and pulses , respectively. The states were probed by pulse of width (duty ). Magnitude of current is plotted in the figure. In (b), bias sequence for “write-read-erase-read” cycle and corresponding current are plotted in the two panels. The measurements were carried out at room temperature.
(Color online) Temperature dependence of characteristics of a device based on ten bilayers of erythrosin B in two voltage-sweep directions. Reverse bias section of the characteristics is shown. The arrow shows the direction of conductance switching in the device at all temperatures. Inset shows temperature dependence of threshold voltage . The line is to guide the eyes.
(Color online) Fitting of (a) low-conducting and (b) high-conducting state currents following thermionic emission model and SCLC with exponential distribution of traps, respectively. Inset of (b) shows variation of the slope of plot, , vs inverse of temperature. The line is the best fit to the experimental points.
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