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Inherent density of point defects in thermal tensile strained entities probed by electron spin resonance
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10.1063/1.2339033
/content/aip/journal/apl/89/15/10.1063/1.2339033
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2339033
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

-band ESR spectra observed at () on and standard structures grown at in ambient. The spectra are normalized to equal scanned interface area and comounted Si:P reference signal intensity.

Image of FIG. 2.
FIG. 2.

Inferred densities of -type defects for the different samples of as-grown . The dashed lines mark the measured densities in standard coprocessed grown on unstrained bulk Si.

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/content/aip/journal/apl/89/15/10.1063/1.2339033
2006-10-09
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Inherent density of point defects in thermal tensile strained (100)Si∕SiO2 entities probed by electron spin resonance
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2339033
10.1063/1.2339033
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