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Electrostatic force microscopy as a tool to estimate the number of active potential barriers in dense non-Ohmic polycrystalline devices
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10.1063/1.2354483
/content/aip/journal/apl/89/15/10.1063/1.2354483
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2354483

Figures

Image of FIG. 1.
FIG. 1.

(a) AFM image of the -based varistor surface. (b) Electrostatic force microscopy (EFM) scans with tip bias increasing from . The tip sample separation was in all the AFM images

Image of FIG. 2.
FIG. 2.

Energy vs tip bias plot illustrating the minimum charge condition.

Tables

Generic image for table
Table I.

Results of nonlinear coefficient , breakdown electric field , mean barrier height value obtained from the EFM data analysis , mean barrier height value obtained by combining Eq. (1) and the complex capacitance plane analysis , mean grain size , and relative density obtained for the SCNCr system.

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/content/aip/journal/apl/89/15/10.1063/1.2354483
2006-10-09
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrostatic force microscopy as a tool to estimate the number of active potential barriers in dense non-Ohmic polycrystalline SnO2 devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2354483
10.1063/1.2354483
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