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Homoepitaxial growth and electrical characterization of iron-doped semi-insulating epilayer
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10.1063/1.2354485
/content/aip/journal/apl/89/15/10.1063/1.2354485
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2354485
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Optical micrograph of the most heavily Fe-doped epilayer surface.

Image of FIG. 2.
FIG. 2.

FWHM difference of (0004) rocking curves before and after epitaxial growth on (a) -type substrate and (b) semi-insulating substrate.

Image of FIG. 3.
FIG. 3.

vs plot of the Schottky barrier diodes. (Forward current density-voltage plot and figure of SBD structure are included.)

Image of FIG. 4.
FIG. 4.

Dependence of the resistivity and free carrier concentration of the iron-doped epilayers on the -butylferrocene partial pressure.

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/content/aip/journal/apl/89/15/10.1063/1.2354485
2006-10-11
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Homoepitaxial growth and electrical characterization of iron-doped semi-insulating 4H-SiC epilayer
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2354485
10.1063/1.2354485
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