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PL spectra measured at from the Gd-implanted AlN sample annealed at with (a) below-band-gap excitation at (b) above-band-gap excitation at . The main emission at occurs from the transitions of the ion.
Two excitation paths for Gd in AlN and the resulting emission.
Dependence of the PL intensity at on the sample temperature: (top) PL spectra measured at temperatures from and (bottom) peak PL intensity plotted as a function of inverse sample temperature. The best fit using Eq. (1) is shown by the solid line.
Time resolved photoluminescence measurements measured at of the main emission line at . The data indicate two distinct decay transients of the UV emission.
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