1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Ultraviolet photoluminescence from Gd-implanted AlN epilayers
Rent:
Rent this article for
USD
10.1063/1.2357552
/content/aip/journal/apl/89/15/10.1063/1.2357552
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2357552
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

PL spectra measured at from the Gd-implanted AlN sample annealed at with (a) below-band-gap excitation at (b) above-band-gap excitation at . The main emission at occurs from the transitions of the ion.

Image of FIG. 2.
FIG. 2.

Two excitation paths for Gd in AlN and the resulting emission.

Image of FIG. 3.
FIG. 3.

Dependence of the PL intensity at on the sample temperature: (top) PL spectra measured at temperatures from and (bottom) peak PL intensity plotted as a function of inverse sample temperature. The best fit using Eq. (1) is shown by the solid line.

Image of FIG. 4.
FIG. 4.

Time resolved photoluminescence measurements measured at of the main emission line at . The data indicate two distinct decay transients of the UV emission.

Loading

Article metrics loading...

/content/aip/journal/apl/89/15/10.1063/1.2357552
2006-10-10
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultraviolet photoluminescence from Gd-implanted AlN epilayers
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2357552
10.1063/1.2357552
SEARCH_EXPAND_ITEM