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Saturable absorption of highly stacked InAs quantum dot layer in band
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10.1063/1.2357598
/content/aip/journal/apl/89/15/10.1063/1.2357598
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2357598
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Structure of highly stacked InAs quantum dots.

Image of FIG. 2.
FIG. 2.

Transmission change measurement as function of pump-probe time delay. The inset is an expanded trace around time delay at zero. Optical pulse energy and central wavelength are set to and .

Image of FIG. 3.
FIG. 3.

PL spectrum (dotted line in the upper figure), maximum transmission change (filled circle in the upper figure), and transmittance (lower figure).

Image of FIG. 4.
FIG. 4.

Intensity dependence of transmittance of stacked InAs quantum dots. Excitation wavelength is . The open squares and solid line are experimental results and fitted curve, respectively. (a) is for the sample with thick substrate and (b) is for the sample with substrate and antireflection coating. The inset of (a) is the transmittance of InP (311)B substrate without dot layer.

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/content/aip/journal/apl/89/15/10.1063/1.2357598
2006-10-11
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Saturable absorption of highly stacked InAs quantum dot layer in 1.5μm band
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2357598
10.1063/1.2357598
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