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(a) Metamorphic InAs tunnel injection quantum dot laser heterostructures grown on GaAs by molecular beam epitaxy and (b) photoluminescence spectra from the active region measured at .
Cross-sectional transmission electron microscopy image of the InGaAs metamorphic buffer layer and InAlGaAs lower cladding layer of the laser heterostructure grown on GaAs.
Light-current characteristics and output spectrum (inset) of a broad area metamorphic InAs tunnel injection quantum dot laser under pulsed mode (1% duty cycle) operation.
Dynamic characteristics of metamorphic tunnel injection quantum dot lasers under pulsed mode (1% duty cycle) operation: (a) small-signal modulation response, (b) linewidth enhancement factor with subthreshold spectrum (inset), and (c) wavelength chirp as a function of frequency.
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