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Growth and characteristics of ultralow threshold metamorphic InAs tunnel injection quantum dot lasers on GaAs
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10.1063/1.2358847
/content/aip/journal/apl/89/15/10.1063/1.2358847
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2358847
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Metamorphic InAs tunnel injection quantum dot laser heterostructures grown on GaAs by molecular beam epitaxy and (b) photoluminescence spectra from the active region measured at .

Image of FIG. 2.
FIG. 2.

Cross-sectional transmission electron microscopy image of the InGaAs metamorphic buffer layer and InAlGaAs lower cladding layer of the laser heterostructure grown on GaAs.

Image of FIG. 3.
FIG. 3.

Light-current characteristics and output spectrum (inset) of a broad area metamorphic InAs tunnel injection quantum dot laser under pulsed mode (1% duty cycle) operation.

Image of FIG. 4.
FIG. 4.

Dynamic characteristics of metamorphic tunnel injection quantum dot lasers under pulsed mode (1% duty cycle) operation: (a) small-signal modulation response, (b) linewidth enhancement factor with subthreshold spectrum (inset), and (c) wavelength chirp as a function of frequency.

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/content/aip/journal/apl/89/15/10.1063/1.2358847
2006-10-10
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth and characteristics of ultralow threshold 1.45μm metamorphic InAs tunnel injection quantum dot lasers on GaAs
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2358847
10.1063/1.2358847
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