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Potential profiling of the nanometer-scale charge-depletion layer in junction using photoemission spectroscopy
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color) Depth-profile analysis of the junction. (a) Schematic figure of the present experiment. (b) AFM image of a single-crystalline NiO layer grown on an ITO film. (c) HRTEM image of a cross section of the heterojunction. (d) Variation of the Zn , Ni , and O core-level spectra during Ar-ion sputtering. (e) Variation of the core-level XPS intensities as a function of sputtering time. (f) Core-level shifts as a function of sputtering time. Theoretical curves for Zn and Ni , which include the effect of finite photoelectron escape depth, are overlaid.

Image of FIG. 2.
FIG. 2.

(Color) Shrink of the CDR of the junction during the removal process of the ZnO overlayer. (a) Evolution of the charge distribution. (b) Resulting changes in the electric field distributions. (c) Variation in the electronic potential at the exposed surface and interface. The area of the gray triangle in (b) and (c) gives the built-in potential.

Image of FIG. 3.
FIG. 3.

(Color online) Deduced band diagram at the interface. Optical band gaps of ZnO and NiO, and , were adopted from the literature (Ref. 19).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Potential profiling of the nanometer-scale charge-depletion layer in n-ZnO∕p-NiO junction using photoemission spectroscopy