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Individual classification of buried transistors in live microprocessors by functional infrared emission spectral microscopy
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10.1063/1.2358935
/content/aip/journal/apl/89/15/10.1063/1.2358935
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2358935
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) fIRESM setup. CCD camera records the electroluminescence image ( resolution) of buried active layer. HPF is in the Fourier plane of lens L1. CCD camera, LPF, and tube lens L2 are at .

Image of FIG. 2.
FIG. 2.

(a) Image [, L1 numerical , and working ] with a single bright blob (rectangle) from two closely spaced MOSFET’s, and (b) backscatter SEM image with two MOSFET’s (1, 2; , ) sharing a common drain (D). Bright spots in SEM image are metal contacts.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Composite spectrum (red, resolution) of bright blob in Fig. 2(a), and (b) error (%) vs SNR of composite spectrum at different power ratios of component spectra. In (a) are spectra from good, leaky, and broken MOSFET’s measured with a grating spectrometer. In (b) ratio of 1:1:8 implies that good MOSFET spectrum is stronger than other two MOSFET spectra. Trials per . Solid line: Error .

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/content/aip/journal/apl/89/15/10.1063/1.2358935
2006-10-10
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Individual classification of buried transistors in live microprocessors by functional infrared emission spectral microscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2358935
10.1063/1.2358935
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