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Resonant tunneling diode made of organic semiconductor superlattice
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10.1063/1.2358936
/content/aip/journal/apl/89/15/10.1063/1.2358936
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2358936

Figures

Image of FIG. 1.
FIG. 1.

Energy band diagram of the organic superlattice (A: -MTDATA and B: Bphen).

Image of FIG. 2.
FIG. 2.

data of a double barrier resonant tunneling diode. The inset shows an energy band diagram of the resonant tunneling diode (I and II and VI and VII are heavily doped regions, III and V are quantum barriers, and IV is the quantum well).

Image of FIG. 3.
FIG. 3.

(a) and (b) characteristics of the OLED with superlattice structures of device 1 [-MTDATA /Bphen , eight layers], device 2 [-MTDATA /Bphen , eigth layers] and device 3 [-MTDATA /Bphen , eight layer].

Image of FIG. 4.
FIG. 4.

characteristics of the OLED with superlattice structure of device 3 [-MTDATA /Bphen , eight layers], (a) characteristics measured from different two samples with same structure. (b) characteristics with different temperatures (solid line: and dash line: ).

Image of FIG. 5.
FIG. 5.

EL spectra of the devices with superlattices: device 1 [-MTDATA /Bphen , eight layers], device 2 [-MTDATA /Bphen , eight layers], and device 3 [-MTDATA /Bphen , eight layers].

Tables

Generic image for table
Table I.

Layer thickness of -MTDATA with a fixed Bphen thickness at for the organic superlattices.

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/content/aip/journal/apl/89/15/10.1063/1.2358936
2006-10-10
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Resonant tunneling diode made of organic semiconductor superlattice
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2358936
10.1063/1.2358936
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