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(Color online) (a) Schematic showing the pentalayer device. The free ferromagnetic layer is embedded inside the channel which is sandwiched between two “hard” ferromagnetic contacts. (b) A schematic showing the self-consistent nature of the transport problem. The magnetization dynamics and transport are mutually dependent on one another.
(Color online) Nonself-consistent (with magnetization dynamics) characteristics of the proposed device (a) with the soft magnet initially at position. The current is larger for positive bias (b) with the soft magnet initially at position. The current is larger for negative bias.
(Color online) (a) The hysteretic I-V originating from a self-consistent solution of transport and LLG. At a certain bias, the current torque produced by the conduction electrons is strong enough to flip the magnet. These transition points are indicated in the figure. (b) Response to a Read-Write-Read pulse. The write pulse switches the magnet from to . The corresponding change in the current can be clearly seen during the write pulse. (c) Variation of the ratio of (), showing the possible reduction of switching current for the AP penta layer device compared to the 3-layer device.
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