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characteristics of Schottky diodes on GaN with nanonetwork
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10.1063/1.2359294
/content/aip/journal/apl/89/15/10.1063/1.2359294
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2359294

Figures

Image of FIG. 1.
FIG. 1.

FWHM values of symmetric (0002) and asymmetric rocking curve scans for different nanonetwork deposition times (0, 3, 4, 4.5, and ). (Scan condition: step size: 0.002°; time/step: ; monochromator aperture: ; detector: no slit, and power: , ). (Inset) The schematic sample structure with various nanonetwork deposition times.

Image of FIG. 2.
FIG. 2.

SEM images reveal the GaN grain size after in situ hydrogen annealing at in MOCVD chamber. (a) without nanonetwork and (b) with nanonetwork.

Image of FIG. 3.
FIG. 3.

Room temperature forward and reverse characteristics of Schottky diodes with different deposition times.

Image of FIG. 4.
FIG. 4.

Reverse breakdown for samples without and with nanonetwork. The inset shows a semilog plot of sample with nanonetwork.

Tables

Generic image for table
Table I.

Properties summary of Schottky diodes on GaN with different nanonetwork deposition times.

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/content/aip/journal/apl/89/15/10.1063/1.2359294
2006-10-10
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: I-V characteristics of Au∕Ni Schottky diodes on GaN with SiNx nanonetwork
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2359294
10.1063/1.2359294
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