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FWHM values of symmetric (0002) and asymmetric rocking curve scans for different nanonetwork deposition times (0, 3, 4, 4.5, and ). (Scan condition: step size: 0.002°; time/step: ; monochromator aperture: ; detector: no slit, and power: , ). (Inset) The schematic sample structure with various nanonetwork deposition times.
SEM images reveal the GaN grain size after in situ hydrogen annealing at in MOCVD chamber. (a) without nanonetwork and (b) with nanonetwork.
Room temperature forward and reverse characteristics of Schottky diodes with different deposition times.
Reverse breakdown for samples without and with nanonetwork. The inset shows a semilog plot of sample with nanonetwork.
Properties summary of Schottky diodes on GaN with different nanonetwork deposition times.
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