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Thermal conductivity of phase-change material
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10.1063/1.2359354
/content/aip/journal/apl/89/15/10.1063/1.2359354
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2359354

Figures

Image of FIG. 1.
FIG. 1.

TDTR data at . Peaks and valleys near are due to acoustic waves reflected from the Si/GST interface and surface. The film thicknesses are 270, 252, and for -GST, -GST, and -GST, respectively.

Image of FIG. 2.
FIG. 2.

Evolution of thermal conductivity as a function of temperature. Data shown as filled circles were taken during continuous heating to , cooling to room temperature, and then returning to ; the data point marked by an open circle at was collected by stopping the temperature ramp at and then cooling to room temperature.

Image of FIG. 3.
FIG. 3.

(a) Melt time vs energy density of pulses as a function of the sequence of laser pulses. The arrows indicate the increased melt time by sequential illuminations at a given energy density. At the lowest energy density, the -GST spot processed with one pulse did not melt, and thus the data point is not shown. (b) Thermal conductivity of the laser-processed film vs energy density of pulses as a function of the number of applied pulses. The dashed line indicates the minimum thermal conductivity .

Tables

Generic image for table
Table I.

Electrical resistivities, hole concentrations, and Hall mobilities for crystalline GST films annealed at fixed temperatures for ; is the electronic contribution to the thermal conductivity calculated from the electrical resistivity using the Wiedemann-Franz law.

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/content/aip/journal/apl/89/15/10.1063/1.2359354
2006-10-10
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermal conductivity of phase-change material Ge2Sb2Te5
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2359354
10.1063/1.2359354
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