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stacks for scaled-down memory devices: Effects of interfaces and thermal annealing
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10.1063/1.2360197
/content/aip/journal/apl/89/15/10.1063/1.2360197
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2360197
/content/aip/journal/apl/89/15/10.1063/1.2360197
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/content/aip/journal/apl/89/15/10.1063/1.2360197
2006-10-12
2014-10-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: SiO2∕Si3N4∕Al2O3 stacks for scaled-down memory devices: Effects of interfaces and thermal annealing
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2360197
10.1063/1.2360197
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