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characteristics of the -type samples annealed in different gas environments. Similar effects were observed for the -type stacks. An insert shows the EOT of the -type stacks as a function of thickness (150 and ) in the samples as deposited and annealed at in the mixture. The extrapolation to a zero thickness of yields the effective EOT of the ON bilayer. A small increase of the bilayer EOT after annealing is observed.
characteristics of -type samples (Au electrode): as grown and annealed at in , , and mixture. curve for the -type sample with the Pt electrode annealed at in is shown for comparison (Pt electrode is advantageous for blocking of electron injection at high currents).
HRTEM images of samples [(a) and (b)] and [(c) and (d)] before [(a) and (c)] and after [(b) and (d)] annealing at in . Crystallization of and the evolution of the SiON interfacial layer are observed.
Spatially resolved EELS spectra containing the and edges and recorded from the different layers in the -type stack annealed at in . The spectra reveal clear changes in the near-edge structure of the edge on going from -like to the amorphous interfacial layer. These changes are consistent with Al being present in the amorphous interfacial layer.
(Color online) Charge loss effects observed in electron/hole-programmed capacitors (samples and annealed in ). (a) curves for the -type stacks with Au electrode: (1) initial; [(2) and (3)] programmed and biased positively and negatively, respectively, prior to the bake; and [(4) and (5)] biased positively and negatively, respectively, after bake. (b) curves for the - and -type stacks with Pt electrode: (1) -type initial; [(2) and (3)] -type programmed and biased positively and negatively, respectively, prior to the bake; [(4) and (5)] -type biased positively and negatively, respectively, after the bake; and [(6) and (7)] -type programmed prior to and after the bake, respectively (program window , ).
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