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Rubrene single crystal field-effect transistor with epitaxial high- gate insulator
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10.1063/1.2360207
/content/aip/journal/apl/89/15/10.1063/1.2360207
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2360207
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Product of is shown in this figure, where is the breakdown gate voltage normalized by the thickness. The product gives an index of the maximum number of carriers attained in FETs.

Image of FIG. 2.
FIG. 2.

(Color online) Fabrication method of organic single crystal field-effect transistors using various dielectric materials.

Image of FIG. 3.
FIG. 3.

(Color online) Characteristics of BTO thin film fabricated on a Nb-STO substrate using a laser ablation method, (a) the peaks of x-ray diffraction and (b) AFM image.

Image of FIG. 4.
FIG. 4.

(Color online) characteristics of rubrene single crystal FET fabricated on (a) /doped-Si and (b) BTO/Nb-STO substrates.

Image of FIG. 5.
FIG. 5.

(Color online) characteristics of rubrene single crystal FET fabricated on (a) /doped-Si and (b) BTO/Nb-STO substrates using vs plot and (inset) log scale plot.

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/content/aip/journal/apl/89/15/10.1063/1.2360207
2006-10-11
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Rubrene single crystal field-effect transistor with epitaxial BaTiO3 high-k gate insulator
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2360207
10.1063/1.2360207
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