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High breakdown voltage with low on-state resistance of vertical conducting diodes on substrates
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10.1063/1.2360227
/content/aip/journal/apl/89/15/10.1063/1.2360227
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2360227
/content/aip/journal/apl/89/15/10.1063/1.2360227
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/content/aip/journal/apl/89/15/10.1063/1.2360227
2006-10-13
2014-10-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High breakdown voltage with low on-state resistance of p-InGaN∕n-GaN vertical conducting diodes on n-GaN substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2360227
10.1063/1.2360227
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