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High breakdown voltage with low on-state resistance of vertical conducting diodes on substrates
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10.1063/1.2360227
/content/aip/journal/apl/89/15/10.1063/1.2360227
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2360227
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic illustration of the sample structure grown on a freestanding GaN substrate. The size of the electrode for the was .

Image of FIG. 2.
FIG. 2.

(0002) x-ray rocking curve profiles of a GaN layer grown on freestanding GaN substrate (solid line) and one grown on substrate (dashed line).

Image of FIG. 3.
FIG. 3.

Forward characteristics of the diodes on GaN and SiC substrates.

Image of FIG. 4.
FIG. 4.

Reverse characteristics of the diodes plotted on a log scale. The breakdown voltage of the diode with the -thick GaN layer on GaN substrate is .

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/content/aip/journal/apl/89/15/10.1063/1.2360227
2006-10-13
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High breakdown voltage with low on-state resistance of p-InGaN∕n-GaN vertical conducting diodes on n-GaN substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2360227
10.1063/1.2360227
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