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Schematic illustration of the sample structure grown on a freestanding GaN substrate. The size of the electrode for the was .
(0002) x-ray rocking curve profiles of a GaN layer grown on freestanding GaN substrate (solid line) and one grown on substrate (dashed line).
Forward characteristics of the diodes on GaN and SiC substrates.
Reverse characteristics of the diodes plotted on a log scale. The breakdown voltage of the diode with the -thick GaN layer on GaN substrate is .
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