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Depth profiles of Ga obtained by implantation into the  channeling direction of (001) Ge at and at two widely different ion fluxes: (a) and (b). The black lines and the gray histograms show the SIMS data and the results of CRYSTAL-TRIM simulations, respectively.
Ga range distributions for RT implantations at . The profiles determined for the case of the low ion flux are nearly identical. The meaning of lines and histograms is the same as in Fig. 1.
Dependence of the relative disorder on the implantation fluence. The symbols show the data obtained from micro-RBS/C (squares: RT; triangles: ; black: ; gray: ). The lines have been drawn to guide the eye.
Schematic representation of the quantity which is as a measure of the normalized damage level (related to the nuclear energy deposition per target atom) formed after a single ion impact, for Ga implantation into Ge (a) as well as for Ge implantation into Si (b) and SiC (c) (Ref. 10). The symbols show the values of . The lines have been drawn to guide the eye. On the abscissa both the ion flux and the time between successive impacts into the same target region are shown.
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