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High negative differential resistance in silicon quantum dot metal-insulator-semiconductor structure
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10.1063/1.2360888
/content/aip/journal/apl/89/15/10.1063/1.2360888
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2360888
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic band diagram of Si QD MIS structure. Electron tunneling occurs through QDs in the case of -type Si wafer and the hole tunneling in the case of -type Si wafer under a forward bias. The bound states of the Si QDs are in the range of depending on their sizes.

Image of FIG. 2.
FIG. 2.

Current-voltage characteristics of (a) a normal silicon nitride film and (b) a Si QD MIS device. Both films were grown on a -type Si wafer . Negative resistance by electron tunneling is observed only in the Si QD MIS device, in which the PVCR is about 76 at at room temperature.

Image of FIG. 3.
FIG. 3.

(Color online) Current-voltage characteristics of a Si QD MIS device grown on a -type Si wafer . The PVCR is about 22240 at under conditions of illumination with a lamp at room temperature. In a reverse bias, the negative resistance disappeared when illuminated due to the field screening effect from electron charging in the Si QDs.

Image of FIG. 4.
FIG. 4.

Current-voltage characteristics of a Si QD MIS device grown on a highly doped -type Si wafer . The peak voltage at which the maximum current density peak occurred was shifted to a lower bias voltage of compared to the sample shown in Fig. 3, accomplished by using a highly doped wafer and reducing diode area. The device shows a PVCR of 254.

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/content/aip/journal/apl/89/15/10.1063/1.2360888
2006-10-12
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High negative differential resistance in silicon quantum dot metal-insulator-semiconductor structure
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2360888
10.1063/1.2360888
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