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Schematic band diagram of Si QD MIS structure. Electron tunneling occurs through QDs in the case of -type Si wafer and the hole tunneling in the case of -type Si wafer under a forward bias. The bound states of the Si QDs are in the range of depending on their sizes.
Current-voltage characteristics of (a) a normal silicon nitride film and (b) a Si QD MIS device. Both films were grown on a -type Si wafer . Negative resistance by electron tunneling is observed only in the Si QD MIS device, in which the PVCR is about 76 at at room temperature.
(Color online) Current-voltage characteristics of a Si QD MIS device grown on a -type Si wafer . The PVCR is about 22240 at under conditions of illumination with a lamp at room temperature. In a reverse bias, the negative resistance disappeared when illuminated due to the field screening effect from electron charging in the Si QDs.
Current-voltage characteristics of a Si QD MIS device grown on a highly doped -type Si wafer . The peak voltage at which the maximum current density peak occurred was shifted to a lower bias voltage of compared to the sample shown in Fig. 3, accomplished by using a highly doped wafer and reducing diode area. The device shows a PVCR of 254.
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