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Strain evolution in GaN layers grown on high-temperature AlN interlayers
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10.1063/1.2360900
/content/aip/journal/apl/89/15/10.1063/1.2360900
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2360900
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Stress thickness vs thickness plot for the GaN top layer of sample E. (b) X-ray scans of the symmetric (0002) diffraction for samples A–E. (c) The strain obtained from the in situ measurement (the solid line). (▾) and (▿) represent the relative in-plane strains obtained from peaks and of XRD for samples A–E.

Image of FIG. 2.
FIG. 2.

Cross-sectional TEM image with for sample E. The orientation of the micrograph and the evolution of an inclined dislocation are schematically shown in the left lower corner. The solid line represents the dislocation line. is the projection length of into the cross-section image plane (see text).

Image of FIG. 3.
FIG. 3.

Calculated strain evolution related to 25 inclined threading dislocation lines ((엯)). The symbols (▾) and (▿) and the solid line have the same meaning as those in Fig. 1(c).

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/content/aip/journal/apl/89/15/10.1063/1.2360900
2006-10-09
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strain evolution in GaN layers grown on high-temperature AlN interlayers
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2360900
10.1063/1.2360900
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