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“Phase diagram” summarizing the crystal structures of GaN grown by MBE under different temperature and flux conditions. The insets show the corresponding RHEED patterns and STM micrographs (size: ) of the surfaces obtained at different conditions. The dotted line is drawn to indicate the phase boundary between zb-GaN and .
(a) Conventional and (b) HRTEM micrograph of a sample grown at two different temperatures. The bottom layer was grown at and the top layer was at . The flux ratio between Ga and N was 1.5 throughout.
(a) Schematic diagram showing the surface of or zb-GaN(111). Triangular zb-GaN and nuclei are drawn to show their opposite orientations grown on the same surface. (b) STM image of a surface following submonolayer GaN deposition at . Some of the islands representing zb-GaN and nuclei are marked by C and H, respectively.
Number of zb-GaN and nuclei on surface following submonolayer deposition at different temperatures.
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