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Influence of surface adsorption in improving ultrashallow junction formation
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10.1063/1.2360917
/content/aip/journal/apl/89/15/10.1063/1.2360917
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2360917

Figures

Image of FIG. 1.
FIG. 1.

SIMS profiles of implanted arsenic diffusion in silicon for various levels of nitrogen adsorption.

Image of FIG. 2.
FIG. 2.

SIMS profile of implanted arsenic diffusion in silicon for various types of surface oxide. The grown oxide was thick.

Image of FIG. 3.
FIG. 3.

Normalized sheet resistances as function of nitrogen coverage (●). Native and grown oxides are also shown for comparison, arbitrarily placed at a coverage of 1 to signify that essentially all silicon dangling bonds are saturated.

Tables

Generic image for table
Table I.

Arsenic dose retained after annealing for various surface nitrogen and oxide coverages.

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/content/aip/journal/apl/89/15/10.1063/1.2360917
2006-10-11
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of surface adsorption in improving ultrashallow junction formation
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2360917
10.1063/1.2360917
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