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SIMS profiles of implanted arsenic diffusion in silicon for various levels of nitrogen adsorption.
SIMS profile of implanted arsenic diffusion in silicon for various types of surface oxide. The grown oxide was thick.
Normalized sheet resistances as function of nitrogen coverage (●). Native and grown oxides are also shown for comparison, arbitrarily placed at a coverage of 1 to signify that essentially all silicon dangling bonds are saturated.
Arsenic dose retained after annealing for various surface nitrogen and oxide coverages.
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