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DLTS spectra of In-implanted Ge [curve (a)], high-energy electron irradiated Ge [curve (b)], and Xe-ion-implanted Ge [curve (c)]. These spectra were recorded using a rate window of at a quiescent reverse bias of with a filling pulse of superimposed on the reverse bias.
Arrhenius plots for defects in In-implanted Ge (triangles) and MeV electron irradiated Ge (circles). The solid triangles represent measurements after annealing at . All data were acquired using the bias and pulsing conditions defined in the caption of Fig. 1.
DLTS spectra of Pd Schottky contacts on In-implanted Ge: (a) room temperature and subsequently annealed at (b) , (c) , (d) , (e) , (f) , (g) . Curve (h) was recorded from a new Schottky contact deposited on In-implanted Ge that was annealed at before metallization.
Electronic properties of prominent defects introduced in -type Ge during In implantation and MeV electron irradiation of Schottky contacts.
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