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Band offset measurements of heterostructure system
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10.1063/1.2360924
/content/aip/journal/apl/89/15/10.1063/1.2360924
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2360924
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Typical current-voltage characteristics for a isotype heterojunction diode at (solid line) and at (dotted line).

Image of FIG. 2.
FIG. 2.

Arrhenius plot of the saturation current for a diode vs the inverse temperature. The slope leads to a barrier height of . The inset shows the expected band bending.

Image of FIG. 3.
FIG. 3.

Photocapacitance spectroscopy of a diode.

Image of FIG. 4.
FIG. 4.

DLTS rate window plot of the heterojunction diode. The rate window is . The filling pulse is , and the measurement bias is .

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/content/aip/journal/apl/89/15/10.1063/1.2360924
2006-10-11
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Band offset measurements of ZnO∕6H-SiC heterostructure system
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2360924
10.1063/1.2360924
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