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Fabrication of dislocation-free tensile strained Si thin films using controllably oxidized porous Si substrates
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10.1063/1.2360930
/content/aip/journal/apl/89/15/10.1063/1.2360930
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2360930
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional SEM images of (a) a thick Si on porous Si substrate, and (b) a thick Si on porous Si substrate.

Image of FIG. 2.
FIG. 2.

Strain in the thin Si films as a function of oxidation time. (a) The 100 and thick Si films, and (b) the 100 and thick Si films.

Image of FIG. 3.
FIG. 3.

Plan-view micrographs from relaxed layers after defect etch. (a) The Nomarsky interference micrograph of the thick Si (sample 3) and (b) the SEM micrograph of the thick Si (sample 3). (c) The Nomarsky interference micrograph of the thick Si (sample 4) and (d) the SEM micrograph of the thick Si (sample 4).

Image of FIG. 4.
FIG. 4.

Theoretical and experimental critical thicknesses for dislocation introduction (Ref. 13) and crack formation (Ref. 10).

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/content/aip/journal/apl/89/15/10.1063/1.2360930
2006-10-12
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication of dislocation-free tensile strained Si thin films using controllably oxidized porous Si substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2360930
10.1063/1.2360930
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