1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Band gap properties of alloys grown by molecular-beam epitaxy
Rent:
Rent this article for
USD
10.1063/1.2361081
/content/aip/journal/apl/89/15/10.1063/1.2361081
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2361081

Figures

Image of FIG. 1.
FIG. 1.

(a) Cross-section TEM (upper part) and SADPs (lower part) from the structure grown on a GaN/sapphire template. In the TEM image, the layers are from left ZnCdO, ZnO, GaN, and then the sapphire substrate. (b) Cross-section TEM images of the interfacial region, along with SADPs.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Optical reflectance and (b) absorption spectra measured at RT from the epilayers. The experimental data are shown by open circles. The solid lines are simulation curves by using the transfer matrix method. The arrows in (a) denote positions of the band gap energies at different values of , deduced from the simulations. The insert in (b) shows variation of the band gap energy as a function of Cd content . The dots represent experimental data. The solid line is a fitting curve using the equation .

Image of FIG. 3.
FIG. 3.

(Color online) Temperature dependences of the band gap energy of the alloys (dots). The solid and dashed lines are the results of fitting based on the Varshni and Bose-Einstein relations, respectively.

Tables

Generic image for table
Table I.

Parameters extracted from the fitting of the room temperature absorption and reflectance spectra of the studied alloys using Eq. (1).

Generic image for table
Table II.

Parameters describing temperature variations of fundamental band gap in the ZnCdO alloys based on the Varshni and Bose-Einstein relations. Values of are also listed. The parameters for ZnO are taken from Refs. 4 and 5.

Loading

Article metrics loading...

/content/aip/journal/apl/89/15/10.1063/1.2361081
2006-10-11
2014-04-23
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Band gap properties of Zn1−xCdxO alloys grown by molecular-beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2361081
10.1063/1.2361081
SEARCH_EXPAND_ITEM