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(a) Cross-section TEM (upper part) and SADPs (lower part) from the structure grown on a GaN/sapphire template. In the TEM image, the layers are from left ZnCdO, ZnO, GaN, and then the sapphire substrate. (b) Cross-section TEM images of the interfacial region, along with SADPs.
(Color online) (a) Optical reflectance and (b) absorption spectra measured at RT from the epilayers. The experimental data are shown by open circles. The solid lines are simulation curves by using the transfer matrix method. The arrows in (a) denote positions of the band gap energies at different values of , deduced from the simulations. The insert in (b) shows variation of the band gap energy as a function of Cd content . The dots represent experimental data. The solid line is a fitting curve using the equation .
(Color online) Temperature dependences of the band gap energy of the alloys (dots). The solid and dashed lines are the results of fitting based on the Varshni and Bose-Einstein relations, respectively.
Parameters extracted from the fitting of the room temperature absorption and reflectance spectra of the studied alloys using Eq. (1).
Parameters describing temperature variations of fundamental band gap in the ZnCdO alloys based on the Varshni and Bose-Einstein relations. Values of are also listed. The parameters for ZnO are taken from Refs. 4 and 5.
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