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Typical SEM image of a Si (100) surface following ion implantation at a fluence of and subsequent electron beam annealing at for . The surface is covered with crystalline hemispherical features with an average diameter of . The surface exhibits a feature density of approximately , corresponding to a surface coverage of .
(Color online) Average size and surface density of the SiC nanostructures as derived from optical photomicrographs at different implantation fluences. The samples were implanted with ions and subsequently annealed using electron beam annealing at for .
AFM scan taken from the boundary (marked B in the image) between the carbon implanted (marked A) and unimplanted (marked C) regions following electron beam annealing. Hemispherical SiC nanostructures are observed to form over the entire surface of the implanted region. At the boundary between the implanted and unimplanted regions, a ridge is observed which is continuous around the perimeter of the implanted/unimplanted boundary. The average height and width of this ridge are found to be and , respectively. The surface of the unimplanted region consisted of pyramidal structures with an average height of which covered the entire surface with an average density of .
high magnification AFM scan of the nanostructures shown in Fig. 3 formed in the unimplanted region.
AFM scan of the ridge formed at the boundary between the carbon implanted and unimplanted regions (marked B in the image). The inset shows a surface profile plot across the implanted/unimplanted boundary along the line marked in the AFM image. The ridge formed at the implanted/unimplanted boundary exhibits a cross section which is pyramidal and typically asymmetric, with the shallower sidewall rising from the unimplanted region. The maximum height of the ridge is above the sample surface. Alongside the ridge and on the implanted side of the boundary, a trough can be seen which is continuous around the perimeter of the implanted/unimplanted boundary.
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