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Simultaneous formation of SiC and Si nanostructures on silicon by local ion implantation and electron beam annealing
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10.1063/1.2361162
/content/aip/journal/apl/89/15/10.1063/1.2361162
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2361162
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Typical SEM image of a Si (100) surface following ion implantation at a fluence of and subsequent electron beam annealing at for . The surface is covered with crystalline hemispherical features with an average diameter of . The surface exhibits a feature density of approximately , corresponding to a surface coverage of .

Image of FIG. 2.
FIG. 2.

(Color online) Average size and surface density of the SiC nanostructures as derived from optical photomicrographs at different implantation fluences. The samples were implanted with ions and subsequently annealed using electron beam annealing at for .

Image of FIG. 3.
FIG. 3.

AFM scan taken from the boundary (marked B in the image) between the carbon implanted (marked A) and unimplanted (marked C) regions following electron beam annealing. Hemispherical SiC nanostructures are observed to form over the entire surface of the implanted region. At the boundary between the implanted and unimplanted regions, a ridge is observed which is continuous around the perimeter of the implanted/unimplanted boundary. The average height and width of this ridge are found to be and , respectively. The surface of the unimplanted region consisted of pyramidal structures with an average height of which covered the entire surface with an average density of .

Image of FIG. 4.
FIG. 4.

high magnification AFM scan of the nanostructures shown in Fig. 3 formed in the unimplanted region.

Image of FIG. 5.
FIG. 5.

AFM scan of the ridge formed at the boundary between the carbon implanted and unimplanted regions (marked B in the image). The inset shows a surface profile plot across the implanted/unimplanted boundary along the line marked in the AFM image. The ridge formed at the implanted/unimplanted boundary exhibits a cross section which is pyramidal and typically asymmetric, with the shallower sidewall rising from the unimplanted region. The maximum height of the ridge is above the sample surface. Alongside the ridge and on the implanted side of the boundary, a trough can be seen which is continuous around the perimeter of the implanted/unimplanted boundary.

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/content/aip/journal/apl/89/15/10.1063/1.2361162
2006-10-12
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Simultaneous formation of SiC and Si nanostructures on silicon by local ion implantation and electron beam annealing
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2361162
10.1063/1.2361162
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