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Effect of nitrogen incorporation on the thermal stability of sputter deposited lanthanum aluminate dielectrics on Si (100)
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10.1063/1.2361170
/content/aip/journal/apl/89/15/10.1063/1.2361170
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2361170
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Figures

Image of FIG. 1.
FIG. 1.

Grazing incidence x-ray diffraction spectra for sputtered 27 and thick LaAlO and thick LaAlON ( flow ratio of and [N] in the bulk film) thin films on top of Si (100) after , RTA. Various crystallographic phases (, cubic; , hexagonal; , tetragonal; , rhombohedral; and , sigma) corresponding to , , , LaO, and AlO compounds were identified using Ref. 23.

Image of FIG. 2.
FIG. 2.

HRTEM cross sections of sputtered (a) LaAlO and (b) LaAlON thin films on Si (100) after , RTA. The corresponding XRD data for these stacks are shown in Fig. 1.

Image of FIG. 3.
FIG. 3.

(Color online) Backside SIMS analysis of LaAlON (66.6% flow ratio)/Si (100) after the , RTA. The amorphous Si capping layer was deposited over a Pt thin film as a mechanical support for the backside polishing process. For comparison of the extent of diffusion of Al and La into Si (100), the corresponding profiles for molecular beam deposited (MBD) LaAlO are displayed (from Ref. 9).

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/content/aip/journal/apl/89/15/10.1063/1.2361170
2006-10-11
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of nitrogen incorporation on the thermal stability of sputter deposited lanthanum aluminate dielectrics on Si (100)
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2361170
10.1063/1.2361170
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