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Ion cutting and transfer of sub- silicon layers using low-keV H, D, and He ions
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10.1063/1.2361182
/content/aip/journal/apl/89/15/10.1063/1.2361182
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2361182
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Figures

Image of FIG. 1.
FIG. 1.

Dependence of blistering and cleavage on implanted dose, for ions of The blistered areas on free surfaces are indicated by points for H (▵) and D (엯), while the dose ranges for which cleaving of bonded surfaces has been observed are shown by cross hatched bars for H (\\\\\) and D (/////); actually, the maximum doses allowing cleavage have not been determined, as indicated by the gray bars.

Image of FIG. 2.
FIG. 2.

Thickness of the transferred layers vs dose for H (▵), D (엯), and He (∎). The error bars represent the standard deviations of the measurements.

Image of FIG. 3.
FIG. 3.

rms roughness of the transferred layers vs dose for H (▵), D (엯), and He (∎). The error bars represent the standard deviations.

Image of FIG. 4.
FIG. 4.

AFM view of the rectangular structures observed on the surface of transferred layers at ).

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/content/aip/journal/apl/89/15/10.1063/1.2361182
2006-10-13
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ion cutting and transfer of sub-100-nm silicon layers using low-keV H, D, and He ions
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2361182
10.1063/1.2361182
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