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Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition
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10.1063/1.2361196
/content/aip/journal/apl/89/15/10.1063/1.2361196
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2361196
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Room temperature PL spectra of Er-doped GaN with laser excitation wavelength . The visible part of the spectrum is scaled by a factor of 4.

Image of FIG. 2.
FIG. 2.

Integrated PL emission intensity of the peak vs sample temperature with laser excitation wavelength . The inset is the Er concentration profile of an Er doped GaN epilayer as determined by SIMS.

Image of FIG. 3.
FIG. 3.

PL spectra of Er-doped GaN for two different excitation wavelengths at ( and ).

Image of FIG. 4.
FIG. 4.

Optical and electrical properties of epilayers as a function of Er concentration: (a) integrated PL emission intensity of the peak, (b) resistivity , (c) electron mobility , and (d) free electron concentration .

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/content/aip/journal/apl/89/15/10.1063/1.2361196
2006-10-09
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2361196
10.1063/1.2361196
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