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Room temperature PL spectra of Er-doped GaN with laser excitation wavelength . The visible part of the spectrum is scaled by a factor of 4.
Integrated PL emission intensity of the peak vs sample temperature with laser excitation wavelength . The inset is the Er concentration profile of an Er doped GaN epilayer as determined by SIMS.
PL spectra of Er-doped GaN for two different excitation wavelengths at ( and ).
Optical and electrical properties of epilayers as a function of Er concentration: (a) integrated PL emission intensity of the peak, (b) resistivity , (c) electron mobility , and (d) free electron concentration .
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