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Excitation-dependent photoluminescence in Stranski-Krastanov nanostructures
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) (a) Low temperature PL spectra in SK nanostructures measured using an IR-enhanced InGaAs photodetector at different excitation intensities. The fitting (dash and dash-dot lines) shows for both PL spectra two Gaussian peaks separated by . The Ge band gap at is indicated. (b) Low temperature normalized PL spectra measured using a higher sensitivity InGaAs diode array photodetector at different (shown by matching colors) excitation intensities varying from . The Ge cluster PL peak shifts from . (c) Higher resolution PL spectra showing the SiGe PL bands at with well-defined TO and NP lines and multiple phonon replicas. Note the vertical logarithmic scale.

Image of FIG. 2.
FIG. 2.

(Color online) (a) PL spectra in SK nanostructures measured under excitation intensity of at different temperatures. The PL spectral redshift as temperature increases is indicated by the dashed line. The PL spectra are shown on a logarithmic scale and vertically shifted for clarity. (b) Ge cluster PL intensity temperature dependence is fitted using the two thermal quench activation energies indicated.

Image of FIG. 3.
FIG. 3.

(Color online) Low temperature PL decays measured using pulsed ( duration) laser excitation. The PL detection photon energies are indicated. The inset summarizes the PL lifetime as a function of the PL detection energy.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Excitation-dependent photoluminescence in Ge∕Si Stranski-Krastanov nanostructures