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Schematic cross section of a pentacene OFET on a PEN substrate. The gate electrode was fabricated by electropolishing the surface of roll-to-roll laminated Al foil on a PEN substrate with a double-faced adhesive PET film used as the adhesive layer.
(Color online) AFM images of (a) laminated Al foil, (b) electropolished Al foil, and (c) gate dielectric based on electropolished Al foil. The rms roughnesses were (a) , (b) , and (c) .
(Color online) (a) AFM image and height profile of the gate dielectric (inset: the rms roughness within the boxed region was ). (b) AFM height (upper) and phase (bottom) images of the -thick pentacene film on the gate dielectric.
(a) Output characteristics of the pentacene OFETs as functions of the gate voltage. (b) Transfer characteristics of the pentacene OFETs (drain-source ), drain current (solid line), and gate leakage current (dashed line).
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