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Ambipolar organic field-effect transistors fabricated using a composite of semiconducting polymer and soluble fullerene
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10.1063/1.2361269
/content/aip/journal/apl/89/15/10.1063/1.2361269
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2361269
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Energy level diagrams of P3HT–PCBM in contact with (a) Au or (b) Al electrodes under no applied bias to the transistor.

Image of FIG. 2.
FIG. 2.

Transfer characteristics of ambipolar FETs ( vs ) using a 1:1 ratio of P3HT and PCBM on Al source-drain electrodes at various annealing temperatures: (a) -type operation mode and (b) -type operation mode . The solid lines drawn through the data obtained after annealing at yield and .

Image of FIG. 3.
FIG. 3.

Typical characteristics for the ambipolar FETs using a P3HT/PCBM mixture and Al source-drain electrodes: (a) p-type operation of as-prepared device, (b) n-type operation of as-prepared device, (c) p-type operation of annealed device at for , and (d) n-type operation of annealed device at for .

Image of FIG. 4.
FIG. 4.

Annealing temperature dependence of the electron and hole mobilities.

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/content/aip/journal/apl/89/15/10.1063/1.2361269
2006-10-11
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ambipolar organic field-effect transistors fabricated using a composite of semiconducting polymer and soluble fullerene
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2361269
10.1063/1.2361269
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