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(Color online) Energy level diagrams of P3HT–PCBM in contact with (a) Au or (b) Al electrodes under no applied bias to the transistor.
Transfer characteristics of ambipolar FETs ( vs ) using a 1:1 ratio of P3HT and PCBM on Al source-drain electrodes at various annealing temperatures: (a) -type operation mode and (b) -type operation mode . The solid lines drawn through the data obtained after annealing at yield and .
Typical characteristics for the ambipolar FETs using a P3HT/PCBM mixture and Al source-drain electrodes: (a) p-type operation of as-prepared device, (b) n-type operation of as-prepared device, (c) p-type operation of annealed device at for , and (d) n-type operation of annealed device at for .
Annealing temperature dependence of the electron and hole mobilities.
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