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Band structure of the epitaxial tunnel junction studied by x-ray and ultraviolet photoelectron spectroscopies
5.R. Wang, X. Jiang, R. M. Shelby, R. M. Macfarlane, S. S. P. Parkin, S. R. Bank, and J. S. Harris, Appl. Phys. Lett. 86, 052901 (2005).
8.In principle, the position measured in the MIS sample is not just the position at the metal/MgO interface because the XPS measurement is averaged in depth. In the cases of Au and Al, the values of the potential variation and the SBHs should be corrected due to the strong band bending in the ultrathin MgO layer. Unfortunately, since we do not know the exact band bending profile induced by charged defects in the MgO layer, the results presented here have not been corrected.
9.Y. Lu, K. C. Assi, B. Arnaud, J. C. Le Breton, P. Turban, B. Lépine, P. Schieffer, S. Lebègue, and G. Jézéquel (unpublished).
10.W. Mönch, Electronic Properties of Semiconductor Interfaces (Springer, Berlin, 2004), p. 131.
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