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Correlation between optical and electrical properties of Mg-doped AlN epilayers
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10.1063/1.2362582
/content/aip/journal/apl/89/15/10.1063/1.2362582
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2362582
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Room temperature PL spectra of (a) an undoped and highly resistive AlN epilayer, (b) a Mg-doped and high resistive AlN epilayer, and (c) a Mg-doped AlN epilayer with improved conductivity.

Image of FIG. 2.
FIG. 2.

Profile of magnesium impurities in a Mg-doped AlN epilayer measured by secondary ion mass spectroscopy (SIMS). Mg concentration is on the order of .

Image of FIG. 3.
FIG. 3.

Temperature variation of the resistivity of Mg-doped AlN in the temperature range of . The inset is the Arrhenius plot of . The fitted value of the activation energy is assuming a temperature dependent hole mobility , .

Image of FIG. 4.
FIG. 4.

Energy level diagram of nitrogen vacancies and Mg acceptors in Mg-doped AlN.

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/content/aip/journal/apl/89/15/10.1063/1.2362582
2006-10-13
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Correlation between optical and electrical properties of Mg-doped AlN epilayers
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2362582
10.1063/1.2362582
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