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Room temperature PL spectra of (a) an undoped and highly resistive AlN epilayer, (b) a Mg-doped and high resistive AlN epilayer, and (c) a Mg-doped AlN epilayer with improved conductivity.
Profile of magnesium impurities in a Mg-doped AlN epilayer measured by secondary ion mass spectroscopy (SIMS). Mg concentration is on the order of .
Temperature variation of the resistivity of Mg-doped AlN in the temperature range of . The inset is the Arrhenius plot of . The fitted value of the activation energy is assuming a temperature dependent hole mobility , .
Energy level diagram of nitrogen vacancies and Mg acceptors in Mg-doped AlN.
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