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Effects of compressive strain on optical properties of quantum wells
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10.1063/1.2362587
/content/aip/journal/apl/89/15/10.1063/1.2362587
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2362587
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

GaN lattice constant vs the wafer position, along directions A, B, C, and D, deduced from the GaN (0002) XRD peak in the blue LED wafer grown on a specially designed sapphire substrate. The wafer edges are taken as the references.

Image of FIG. 2.
FIG. 2.

GaN lattice constants vs deduced from the GaN (0002) and (104) XRD reflection peaks in the blue LED wafer grown on a specially designed substrate.

Image of FIG. 3.
FIG. 3.

EL spectra of blue LEDs grown on (a) flat and (b) specially designed substrates.

Image of FIG. 4.
FIG. 4.

EL spectral peak position of blue LEDs wafer vs GaN lattice constant .

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/content/aip/journal/apl/89/15/10.1063/1.2362587
2006-10-13
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of compressive strain on optical properties of InxGa1−xN∕GaN quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2362587
10.1063/1.2362587
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