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Oxygen atoms on : Imaging with scanning tunneling microscopy
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10.1063/1.2362623
/content/aip/journal/apl/89/15/10.1063/1.2362623
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2362623
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) [(a)–(c)] STM micrographs taken at of Si(100) exposed to the residual gases of the vacuum for 30, 90, and , respectively ( sample bias, ). The dimer rows run diagonally from the upper left to the lower right. Dimer vacancy (DV) defects appear as dark spots that span the dimer row and the -type defects appear as bright ovals. The -type densities are , , and ML for (a), (b), and (c), respectively. [(d)–(f)] STM micrographs taken at after Cl passivation and heating the surfaces of (a)–(c) to for , (, ). Cl-free or bare dimers (BD) appear as bright “triplet” features. Split dimer (SD) defects appear as darker, symmetrical features that have a dark spot in the dimer center. The SD densities are , , and ML for (d), (e), and (f), respectively.

Image of FIG. 2.
FIG. 2.

Summary of the results of Fig. 1 showing that the SD density is linearly proportional to the initial -type concentration. The straight line is a guide for the eye.

Image of FIG. 3.
FIG. 3.

(Color online) STM micrograph of a nearly defect-free Cl–Si(100) produced by immediately dosing the surface after the standard thermal procedure (, ). The total surface defect density is ML in the form of ML of dimer vacancies and ML of split dimers.

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/content/aip/journal/apl/89/15/10.1063/1.2362623
2006-10-13
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Oxygen atoms on Si(100)-(2×1): Imaging with scanning tunneling microscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2362623
10.1063/1.2362623
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