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Effect of InAs dots on noise of quantum dot resonant tunneling single-photon detectors
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) Photoluminescence spectra show the evolution of the light emission from the quantum dots with increased InAs deposition time. The shift towards higher wavelength suggests an increase in dot dimensions.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Inclusion of a layer of quantum dots in the depletion region of the device has a distinct effect on the resonance behavior. With the negatively charged quantum dots affecting the energy levels in the device higher bias is required to achieve resonance. (b) An of a typical QDRTD; for detection the device is biased at positive voltages just before resonance.

Image of FIG. 3.
FIG. 3.

(Color online) AC noise measured for a set of wafers with different InAs deposition times is shown together with a control device. It can readily be seen that the noise in the detection direction scales with increased deposition time thus making a reduction of InAs deposition favorable for low-noise operation.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Counts per pulse are plotted against the current step height. Even at the lowest flux used of 0.01 photons per pulse a clear light induced wing is visible. (b) Data collected over a large range of photon fluxes result in a linear relationship between detected and incident photons.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of InAs dots on noise of quantum dot resonant tunneling single-photon detectors