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Characterization of atomic-layer-deposited interface improved by plasma pretreatment
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10.1063/1.2363145
/content/aip/journal/apl/89/15/10.1063/1.2363145
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2363145
/content/aip/journal/apl/89/15/10.1063/1.2363145
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/content/aip/journal/apl/89/15/10.1063/1.2363145
2006-10-13
2014-10-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of atomic-layer-deposited Al2O3∕GaAs interface improved by NH3 plasma pretreatment
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2363145
10.1063/1.2363145
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