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Characterization of atomic-layer-deposited interface improved by plasma pretreatment
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10.1063/1.2363145
/content/aip/journal/apl/89/15/10.1063/1.2363145
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2363145
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Cross-sectional HRTEM image of ALD on plasma-treated GaAs substrate. (b) The characteristics of MOS capacitor with on HF-cleaned and plasma-treated GaAs substrates, respectively.

Image of FIG. 2.
FIG. 2.

(a) As and (b) Ga XPS spectra of HF-cleaned GaAs surface.

Image of FIG. 3.
FIG. 3.

(a) As and (b) Ga XPS spectra of ALD on HF-cleaned GaAs substrate.

Image of FIG. 4.
FIG. 4.

(a) As and (b) Ga XPS spectra of plasma-treated GaAs surface.

Image of FIG. 5.
FIG. 5.

(a) As and (b) Ga XPS spectra of ALD on plasma-treated GaAs substrate.

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/content/aip/journal/apl/89/15/10.1063/1.2363145
2006-10-13
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of atomic-layer-deposited Al2O3∕GaAs interface improved by NH3 plasma pretreatment
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/15/10.1063/1.2363145
10.1063/1.2363145
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