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Ultralow resistance-area product of and high magnetoresistance above 50% in magnetic tunnel junctions
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10.1063/1.2352046
/content/aip/journal/apl/89/16/10.1063/1.2352046
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/16/10.1063/1.2352046
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Figures

Image of FIG. 1.
FIG. 1.

(a) Cross-section structure of magnetic tunnel junction (MTJ). (b) High-resolution cross-section transmission electron microscopy (TEM) image of MTJ with designed MgO thickness of .

Image of FIG. 2.
FIG. 2.

(Color) (a) Quadrapole mass spectra of sputtering chamber with (black bars) and without a Ta getter (white bars). (b) X-ray diffraction profiles from thick MgO layers prepared with (red line) and without Ta getter (blue line). The dotted line represents background intensity drawn as a guide for the eyes.

Image of FIG. 3.
FIG. 3.

Magnetoresistance curves at room temperature for optimized MTJs. (a) Designed MgO , , and MR . (b) Designed MgO , , and MR . The thick arrows represent magnetization alignments.

Image of FIG. 4.
FIG. 4.

MR ratio at room temperature for MTJs as a function of product. The open circles represent optimized results of this study. The solid circles represent results of our previous study (Ref. 14).

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/content/aip/journal/apl/89/16/10.1063/1.2352046
2006-10-17
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultralow resistance-area product of 0.4Ω(μm)2 and high magnetoresistance above 50% in CoFeB∕MgO∕CoFeB magnetic tunnel junctions
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/16/10.1063/1.2352046
10.1063/1.2352046
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