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Magnetotransport properties of Ge channels with extremely high compressive strain
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10.1063/1.2354467
/content/aip/journal/apl/89/16/10.1063/1.2354467
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/16/10.1063/1.2354467

Figures

Image of FIG. 1.
FIG. 1.

Raman spectra of the Ge channel structures grown on strain-relaxed buffer layers.

Image of FIG. 2.
FIG. 2.

(a) Shubnikov–de Haas (SdH) oscillations obtained at 1.2 K for the Ge channel structure grown on the strain-relaxed buffer layer. (b) SdH oscillations at various temperatures at lower magnetic fields for the same sample.

Image of FIG. 3.
FIG. 3.

Hole density dependence of the effective mass. The Ge concentrations of SiGe buffer layers are indicated at the plots. Reported values obtained from Ge channels grown on buffers are also plotted.

Image of FIG. 4.
FIG. 4.

Hole density dependence of the Dingle ratios for the samples. Ge concentrations of SiGe buffer layers are indicated at the plots.

Tables

Generic image for table
Table I.

Ge concentrations of SiGe buffer layers, compressive strain of the Ge channel layers, hole Hall mobility, and hole density for all samples fabricated in this study.

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/content/aip/journal/apl/89/16/10.1063/1.2354467
2006-10-17
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Magnetotransport properties of Ge channels with extremely high compressive strain
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/16/10.1063/1.2354467
10.1063/1.2354467
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