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Raman spectra of the Ge channel structures grown on strain-relaxed buffer layers.
(a) Shubnikov–de Haas (SdH) oscillations obtained at 1.2 K for the Ge channel structure grown on the strain-relaxed buffer layer. (b) SdH oscillations at various temperatures at lower magnetic fields for the same sample.
Hole density dependence of the effective mass. The Ge concentrations of SiGe buffer layers are indicated at the plots. Reported values obtained from Ge channels grown on buffers are also plotted.
Hole density dependence of the Dingle ratios for the samples. Ge concentrations of SiGe buffer layers are indicated at the plots.
Ge concentrations of SiGe buffer layers, compressive strain of the Ge channel layers, hole Hall mobility, and hole density for all samples fabricated in this study.
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