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Validity/invalidity of Schottky-Mott rules for Schottky contacts to III-V nitride semiconductor heterostructures
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10.1063/1.2358956
/content/aip/journal/apl/89/16/10.1063/1.2358956
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/16/10.1063/1.2358956
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Temperature dependence of the Schottky diode (a) barrier height and (b) ideality factor for the and diodes. Curve 1 is for the diode and curve 2 is for the diode.

Image of FIG. 2.
FIG. 2.

Calculated variation of metal electron affinity modified by high temperature chemistry.

Image of FIG. 3.
FIG. 3.

Schematic diagram showing charge alignment due to polarization effect, two-step trap-assisted tunneling, field-emission tunneling, trapping, and hopping, in the interface regions of Schottky diodes. In the figure activation energy is denoted by , deep level trapping by TRP, shallow-level trapping by TRA, two-step trap-assisted tunneling by TAT, activation and drift by A&D, field-emission tunneling by FET, hopping by HOP, polarization charge by POC, metal region 1 by RE1, region 2 by RE2, and GaN region 3 by RE3.

Image of FIG. 4.
FIG. 4.

Forward current-voltage characteristics of Schottky diodes before and after heating; curve 1 was obtained for the diodes before heating, and curve 2 was obtained for the diodes after heating, both at room temperature.

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/content/aip/journal/apl/89/16/10.1063/1.2358956
2006-10-20
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Validity/invalidity of Schottky-Mott rules for Schottky contacts to III-V nitride semiconductor heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/16/10.1063/1.2358956
10.1063/1.2358956
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