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Temperature dependence of the Schottky diode (a) barrier height and (b) ideality factor for the and diodes. Curve 1 is for the diode and curve 2 is for the diode.
Calculated variation of metal electron affinity modified by high temperature chemistry.
Schematic diagram showing charge alignment due to polarization effect, two-step trap-assisted tunneling, field-emission tunneling, trapping, and hopping, in the interface regions of Schottky diodes. In the figure activation energy is denoted by , deep level trapping by TRP, shallow-level trapping by TRA, two-step trap-assisted tunneling by TAT, activation and drift by A&D, field-emission tunneling by FET, hopping by HOP, polarization charge by POC, metal region 1 by RE1, region 2 by RE2, and GaN region 3 by RE3.
Forward current-voltage characteristics of Schottky diodes before and after heating; curve 1 was obtained for the diodes before heating, and curve 2 was obtained for the diodes after heating, both at room temperature.
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