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(a) Measured gate leakage current in a large area SONOS at . The stress condition is for . Both devices are programed to an identical threshold voltage window of . (b) Corresponding retention loss for the two samples.
Extracted nitride trap density distribution vs relative nitride trap energy. is estimated to be (Ref. 9).
Measured SILC in two differently stressed samples. Sample A is stressed at for and sample B is for . The programming window is .
Measured SILC for two different programming windows. Samples A and C are stressed under the same condition ( for ) but have program windows of 3 and , respectively.
Extracted nitride trap density from samples A, B, and C, respectively, by using our technique.
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