1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Extraction of nitride trap density from stress induced leakage current in silicon-oxide-nitride-oxide-silicon flash memory
Rent:
Rent this article for
USD
10.1063/1.2360180
/content/aip/journal/apl/89/16/10.1063/1.2360180
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/16/10.1063/1.2360180

Figures

Image of FIG. 1.
FIG. 1.

(a) Measured gate leakage current in a large area SONOS at . The stress condition is for . Both devices are programed to an identical threshold voltage window of . (b) Corresponding retention loss for the two samples.

Image of FIG. 2.
FIG. 2.

Extracted nitride trap density distribution vs relative nitride trap energy. is estimated to be (Ref. 9).

Image of FIG. 3.
FIG. 3.

Measured SILC in two differently stressed samples. Sample A is stressed at for and sample B is for . The programming window is .

Image of FIG. 4.
FIG. 4.

Measured SILC for two different programming windows. Samples A and C are stressed under the same condition ( for ) but have program windows of 3 and , respectively.

Tables

Generic image for table
Table I.

Extracted nitride trap density from samples A, B, and C, respectively, by using our technique.

Loading

Article metrics loading...

/content/aip/journal/apl/89/16/10.1063/1.2360180
2006-10-20
2014-04-17
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Extraction of nitride trap density from stress induced leakage current in silicon-oxide-nitride-oxide-silicon flash memory
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/16/10.1063/1.2360180
10.1063/1.2360180
SEARCH_EXPAND_ITEM