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(Color) Silicon light-emitting field-effect transistor.
(Color) Photoluminescence mapping from an ultrathin Si film of for (a) peak wavelength and (b) peak intensity. The mapping was obtained with a spatial resolution of .
(Color) Optical interconnections on a silicon chip. (a) Chip images of the experiments. The input pulse of the forward bias was applied between probes 1 and 2 connected to the LET of made of the ultrathin silicon. The nondoped silicon pads were used as a detector, and the constant bias of was applied between probes 3 and 4. (b) Electroluminescence intensity mapping at . The integration time for a charge-coupled device (CCD) was . (c) Photocurrents of the detector induced by the LET. The detector can slowly respond the signal from the LET, if the pulse height is sufficiently large. The light from the LET reduces the time to reach the current flow in the detector being quasiequilibrium, compared with the time around without light. (d) The input pulse applied to the LET.
(Color) Optical intensity controlled by silicon light-emitting field-effect transistor. [(a)–(c)] Electroluminescence intensity mapping of and by the application of and , 0, and , respectively. The integration time for CCD was to avoid the saturation. (d) Gate control of photon emissions. The photocurrents of the detector that were obtained after from the input voltage pulse were applied to the LET of .
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