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Transport in carbon nanotube diodes
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10.1063/1.2360895
/content/aip/journal/apl/89/16/10.1063/1.2360895
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/16/10.1063/1.2360895

Figures

Image of FIG. 1.
FIG. 1.

(Color online) curve for a typical device (, grounded, ). Inset: Device schematic.

Image of FIG. 2.
FIG. 2.

(Color online) plot for a typical device (, ).

Image of FIG. 3.
FIG. 3.

(Color online) curves in the low forward bias regime at various temperatures. Inset top: Full curves in forward bias at (∎) and (◀). Inset bottom: Temperature dependence of the inverse slope of the curves.

Image of FIG. 4.
FIG. 4.

(Color online) Fits of the ideal diode equation with a series resistor in the high forward bias regime at 80, 160, and (bottom to top, offset for clarity). Inset: for two different devices. The solid line indicates the expected temperature dependence for an ideal diode.

Image of FIG. 5.
FIG. 5.

Change of breakdown voltage with (a) nanotube diameter and (b) temperature ( diameter tube).

Tables

Generic image for table
Table I.

Characteristics of four devices.

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/content/aip/journal/apl/89/16/10.1063/1.2360895
2006-10-19
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Transport in carbon nanotube p-i-n diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/16/10.1063/1.2360895
10.1063/1.2360895
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