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(Color online) Compositional profile of Ga, In, As, and Sb measured along the cross section of the grown layers on GaAs using electron probe microanalysis (EPMA).
Room temperature infrared transmission spectrum of the grown epilayer. The cut off wavelength is defined as the half transmission (layer ).
(Color online) Optical micrograph showing the etch pits formed on the surface of the grown layer that were used to determine the dislocation density.
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