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Growth of long wavelength layers on GaAs from liquid phase
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10.1063/1.2360899
/content/aip/journal/apl/89/16/10.1063/1.2360899
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/16/10.1063/1.2360899
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Compositional profile of Ga, In, As, and Sb measured along the cross section of the grown layers on GaAs using electron probe microanalysis (EPMA).

Image of FIG. 2.
FIG. 2.

Room temperature infrared transmission spectrum of the grown epilayer. The cut off wavelength is defined as the half transmission (layer ).

Image of FIG. 3.
FIG. 3.

(Color online) Optical micrograph showing the etch pits formed on the surface of the grown layer that were used to determine the dislocation density.

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/content/aip/journal/apl/89/16/10.1063/1.2360899
2006-10-16
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth of long wavelength InxGa1−xAsySb1−y layers on GaAs from liquid phase
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/16/10.1063/1.2360899
10.1063/1.2360899
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