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Effects of interfacial organic layers on thin film nucleation in atomic layer deposition
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View: Figures


Image of FIG. 1.
FIG. 1.

Deposited thickness per cycle vs exposure time to for ALD of TiN on two surfaces: chemical oxide, ( and ), and modified with a terminated SAM (, Gen-1-3C). Reactants introduced via gated supersonic and effusive molecular beams. TiN film thickness was measured using ellipsometry.

Image of FIG. 2.
FIG. 2.

TiN thin film thicknesses, measured using ellipsometry, as a function of the number of reactant cycles for ALD on several substrates: clean chemical oxide, , and modified by four different SAMs. The SAMs possess two different functional terminations: (Gen-1-3C and Gen-1-12C) and (OTS and TTS); the SAMs also represent different chain/backbone lengths. The smooth lines represent a fit to Eq. (1).

Image of FIG. 3.
FIG. 3.

Growth attenuation factor as a function of thickness of the SAM . Here we plot results for SAMs possessing either reactive end groups (–OH or , open symbols) or unreactive end groups ( or , filled symbols). The smaller symbols and dashed lines represent results derived from thicknesses determined from RBS.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of interfacial organic layers on thin film nucleation in atomic layer deposition