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Determination of polarization charge density on interface of heterostructure by electroreflectance
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10.1063/1.2360909
/content/aip/journal/apl/89/16/10.1063/1.2360909
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/16/10.1063/1.2360909
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Calculated conduction band edge of the heterostructure vs position from the surface at various . (a) , (b) , (c) , and (d) .

Image of FIG. 2.
FIG. 2.

ER spectra of the heterostructure at various , where the numbers are indexed to the extrema of FKOs.

Image of FIG. 3.
FIG. 3.

Strength of the electric field in the barrier vs . The line is the least squares fit to the data between and . The slope yields the width , which is the distance between the surface and the 2DEG layer.

Image of FIG. 4.
FIG. 4.

Amplitude of the -exciton transition of the GaN vs . The amplitude was obtained by Lorentzian fitting of ER spectra in Fig. 2.

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/content/aip/journal/apl/89/16/10.1063/1.2360909
2006-10-16
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Determination of polarization charge density on interface of AlGaN∕GaN heterostructure by electroreflectance
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/16/10.1063/1.2360909
10.1063/1.2360909
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