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Rapid solid-phase crystallization of high-rate, hot-wire chemical-vapor-deposited hydrogenated amorphous silicon
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10.1063/1.2361163
/content/aip/journal/apl/89/16/10.1063/1.2361163
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/16/10.1063/1.2361163
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Comparison of interference-fringe amplitude variation during SPC of HW and PE films during a anneal. See text for explanation of points A, B, and C.

Image of FIG. 2.
FIG. 2.

Left axis: Crystallization time as a function of bonded H in HW and PE films. Right axis: Total oxygen in as-deposited films. Crystallization temperature is .

Image of FIG. 3.
FIG. 3.

(Color online) (a) Crystallization time and (b) void fraction as a function of deposition rate for HW films. SPC anneal temperature is .

Image of FIG. 4.
FIG. 4.

Arrhenius plot of incubation and crystallization times for HW and PE films as a function of annealing temperature. Enthalpy , entropy , and free-energy barrier values are given in the table. is Boltzmann’s constant.

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/content/aip/journal/apl/89/16/10.1063/1.2361163
2006-10-17
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Rapid solid-phase crystallization of high-rate, hot-wire chemical-vapor-deposited hydrogenated amorphous silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/16/10.1063/1.2361163
10.1063/1.2361163
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