1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
High-mobility transistors based on nanoassembled carbon nanotube semiconducting layer and nanoparticle dielectric layer
Rent:
Rent this article for
USD
10.1063/1.2361278
/content/aip/journal/apl/89/16/10.1063/1.2361278
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/16/10.1063/1.2361278
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Structure and test scheme of a TFT fabricated with LBL nano self-assembly and microlithography.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Model structure of LBL self-assembled SWNCT semiconducting layer and nanoparticle dielectric layer. (b) SEM image of the assembled SWNCTs. (c) Cross-sectional SEM image of the assembled SWCNT/ layers.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Drain current-voltage characteristics of a SWNCT TFT. The gate voltage sweeps from with a step. (b) Gate characteristics of the same device at the saturation region. The drain voltage is fixed at . The gate voltage sweeps from with a step.

Loading

Article metrics loading...

/content/aip/journal/apl/89/16/10.1063/1.2361278
2006-10-19
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-mobility transistors based on nanoassembled carbon nanotube semiconducting layer and SiO2 nanoparticle dielectric layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/16/10.1063/1.2361278
10.1063/1.2361278
SEARCH_EXPAND_ITEM