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High-mobility transistors based on nanoassembled carbon nanotube semiconducting layer and nanoparticle dielectric layer
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10.1063/1.2361278
/content/aip/journal/apl/89/16/10.1063/1.2361278
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/16/10.1063/1.2361278
/content/aip/journal/apl/89/16/10.1063/1.2361278
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/content/aip/journal/apl/89/16/10.1063/1.2361278
2006-10-19
2014-09-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-mobility transistors based on nanoassembled carbon nanotube semiconducting layer and SiO2 nanoparticle dielectric layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/16/10.1063/1.2361278
10.1063/1.2361278
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